Boron implantation in silicon: Isotope effects studied by secondary ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347097
Reference14 articles.
1. Concentration profiles of boron implantations in amorphous and polycrystalline silicon
2. Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope10B in Si
3. Comment on ’’Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope10B in Si’’
4. Comparison of range and range straggling of implanted10B and11B in silicon
5. Low energy range distributions of 10B and 11B in amorphous and crystalline silicon
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