Isotope effects for mega‐electron‐volt boron ions in amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353798
Reference20 articles.
1. Concentration profiles of boron implantations in amorphous and polycrystalline silicon
2. Profile studies of MeV ions implanted into Si
3. Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV
4. Implanted boron profiles in silicon
5. Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope10B in Si
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