Low temperature InAlAs buffer layers using trimethylarsenic and arsine by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110248
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2. Sims and photoluminescence evaluation of high purity InP grown by organometallic vapor phase epitaxy
3. Origin ofn‐type conduction at the interface between epitaxial‐grown layer and InP substrate and its suppression by heating in phosphine atmosphere
4. The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE
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