Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVD-Reference-Cited by-同舟云学术

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Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVD

Published:2003-04 Issue: Volume:17 Page:229-231
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

HELLARA J,HASSEN F,MAAREF H,SOULIERE V,MONTEIL Y

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation;AIP Advances;2024-01-01

2. Different spectral features near the energy bandgaps of normal and inverse heterostructures of In<sub>0.52</sub>Al<sub>0.48</sub>As/InP;Acta Physica Sinica;2024

3. Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures;Japanese Journal of Applied Physics;2020-01-24

4. Effect of V/III ratio on the optical properties of (3 1 1)A and (3 1 1) B oriented InAlAs/InP heterostructures;Results in Physics;2019-03

5. Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE;Journal of Materials Science: Materials in Electronics;2017-08-23

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