Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Uniformity of semi-insulating InP wafers obtained by Fe diffusion
2. Semi-Insulating Behavior of Undoped Inp
3. Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing
4. Mesoscopic nonuniformity of wafer-annealed semi-insulating InP
5. Effect of annealing conditions on the uniformity of undoped Semi-Insulating InP
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1. Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures;Japanese Journal of Applied Physics;2020-01-24
2. Indium phosphide;Single Crystals of Electronic Materials;2019
3. Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE;Journal of Materials Science: Materials in Electronics;2017-08-23
4. Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE;Journal of Nanoparticle Research;2017-01
5. Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-05
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