Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365748
Reference21 articles.
1. Assessment of Fe‐doped semi‐insulating InP crystals by scanning photoluminescence measurements
2. Characterization of the homogeneity of semi-insulating InP by the spatially resolved photocurrent
3. Infrared absorption of n- and p-type Fe-doped InP and mapping of the Fe distribution
4. Spatially-resolved photoluminescence study of InP: Fe substrates from different suppliers
5. Spatial investigation of an iron-doped indium phosphide ingot
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1. Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields;Springer Handbook of Crystal Growth;2010
2. Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property;Acta Physica Sinica;2007
3. Annealing ambient controlled deep defect formation in InP;The European Physical Journal Applied Physics;2004-07
4. Deep level defects in high temperature annealed InP;Science in China Series E;2004
5. Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances;Journal of Crystal Growth;2003-11
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