Assessment of Fe‐doped semi‐insulating InP crystals by scanning photoluminescence measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346780
Reference16 articles.
1. Monolithic optoelectronic integration: A new component technology for lightwave communications
2. Substrate effects on performance of InP MOSFETs
3. Nonradiative regions in GaInAsP/InP double heterostructure laser material: correlation with dislocation clusters in the substrates
4. The effect of crystal defects on device performance and reliability
5. The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
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