Infrared absorption of n- and p-type Fe-doped InP and mapping of the Fe distribution-Reference-Cited by-同舟云学术

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Infrared absorption of n- and p-type Fe-doped InP and mapping of the Fe distribution

Published:1991-06 Issue:1-4 Volume:50 Page:364-368
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mosel F.,Seidl A.,Hofmann D.,Müller G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Proc. Conf. on Semi-Insulating III–V Materials;Hofmann,1988

2. Spatially-resolved photoluminescence study of InP: Fe substrates from different suppliers

3. Proc. Conf. on Semi-Insulating III–V Materials;Krawczyk,1990

4. Proc. Conf. on Semi-Insulating III–V Materials;Tomzig,1988

5. Infrared absorption spectra in bulk Fe‐doped InP

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2. Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence;Journal of Luminescence;2008-02

3. Quick mapping of carrier concentration in InP substrate with large diameter by near-infrared transmittance measurement;Materials Science in Semiconductor Processing;2006-02

4. Two-photon absorption in InP substrates in the 1.55μm range;Applied Physics Letters;2004-07-12

5. Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping;The European Physical Journal Applied Physics;2004-07

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