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Characterization of the homogeneity of semi-insulating InP by the spatially resolved photocurrent

  • Published:1993-06 Issue:1-2 Volume:20 Page:105-108
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Martín P.,Jiménez J.,González M.A.,Sanz L.F.,Chafai M.,Avella M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Homogeneity of Thermally-Annealed Lightly Fe-Doped SI InP;MRS Proceedings;1999

2. Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing;Journal of Applied Physics;1997-10-15

3. Homogeneity of thermally annealed Fe-doped InP wafers;Materials Science and Engineering: B;1997-02

4. Photocurrent contrast in semi-insulating Fe-doped InP;Semiconductor Science and Technology;1996-06-01

5. Photocurrent study of Fe-doped semi-insulating InP;Materials Science and Engineering: B;1994-12
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