Origin ofn‐type conduction at the interface between epitaxial‐grown layer and InP substrate and its suppression by heating in phosphine atmosphere
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350857
Reference14 articles.
1. MOCVD growth of selectively doped AlInAs/GaInAs heterostructures and its application to HIFETs (heterointerface FETs)
2. Effects of ratio on electronic and optical properties of GaInAs layers grown by MOCVD
3. High Mobility GaInAs Thin Layers Grown by Molecular Beam Epitaxy
4. Chemical beam epitaxial growth of extremely high quality InGaAs on InP
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2. Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-05
3. Interface charge compensation in InP based heterojunction bipolar transistors with implanted subcollectors;Applied Physics Letters;2006-07-10
4. Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer;Japanese Journal of Applied Physics;2003-08-15
5. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy;Journal of Applied Physics;2003-05
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