Electrical activation curve of silicon implanted in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101996
Reference19 articles.
1. Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
2. Stoichiometry dependence of electrical activation efficiency in Si implanted layers of undoped, semi‐insulating GaAs
3. Effect of crystal stoichiometry on activation efficiency in Si implanted, rapid thermal annealed GaAs
4. GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations
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1. Nondestructive evaluation of carrier concentration in the channel layer of In0.5Ga0.5P/In0.2Ga0.8As/GaAs heterostructure field-effect transistors by Raman scattering;Applied Physics Letters;1998-07-20
2. Participation ofEL2 in the donor activation of silicon implanted into GaAs;Physical Review B;1994-06-15
3. Thermodynamic model for the annealing process of Si-implanted GaAs;Modelling and Simulation in Materials Science and Engineering;1993-07-01
4. A calibration of the localized vibrational mode absorption line due to isovalent boron impurities in gallium arsenide;Semiconductor Science and Technology;1992-11-01
5. Si‐implanted InGaP/GaAs metal‐semiconductor field‐effect transistors;Applied Physics Letters;1992-04-20
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