Effect of crystal stoichiometry on activation efficiency in Si implanted, rapid thermal annealed GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97222
Reference10 articles.
1. Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
2. Annealing of Ion‐Implanted GaAs in a Controlled Atmosphere
3. Diffusion phenomena and defect generation in rapidly annealed GaAs
4. Ion implantation for high-speed III–V ICs
5. Electron mobility in n‐type GaAs at 77 K: Determination of the compensation ratio
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