Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs-Reference-Cited by-同舟云学术

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Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs

Published:1985-07-20 Issue:Part 2, No. 7 Volume:24 Page:L488-L490
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sato Takashi,Terashima Kazutaka,Emori Haruo,Ozawa Shoichi,Nakajima Masato,Fukuda Tsuguo,Ishida Koichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inelastic Neutron Scattering Study of Ferroelectric Phase Transition in Lithium Heptagermanate (Li2Ge7O15);Ferroelectrics;2011-01

2. Nondestructive measurements of stoichiometry in undoped semi‐insulating gallium arsenide by x‐ray bond method;Applied Physics Letters;1996-12-16

3. Disappearance of the infrared soft mode in the weak ferroelectric Li2Ge7O15;Solid State Communications;1995-06

4. SiO2/amorphous As/GaAs passivation systems prepared at room temperature by 50 Hz plasma‐enhanced chemical‐vapor deposition;Journal of Applied Physics;1994-11-15

5. Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition ofSiO2Films;Japanese Journal of Applied Physics;1994-07-15

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