Si‐implanted InGaP/GaAs metal‐semiconductor field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107112
Reference19 articles.
1. Unusual C-V profiles of Si-implanted
2. 0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs
3. Ultrahigh-frequency performance of submicrometer-gate ion-implanted GaAs MESFETs
4. Effects of neutral buried p-layer on high-frequency performance of GaAs MESFETs
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1. Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy;Japanese Journal of Applied Physics;2016-03-09
2. InAs/GaP/InGaP high-temperature power Schottky rectifier;Applied Physics Letters;2004-04-12
3. Investigation of degradation mechanism of Schottky diodes;Solid-State Electronics;2003-05
4. Temperature dependence and origin of InP(100) reflectance anisotropy down to 20 K;Physical Review B;2001-05-22
5. Effect of annealing on the electrical and optical properties of GaAs/InGaP/n+InGaAs/GaAs epitaxial layers;Journal of Applied Physics;1998-11-15
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