Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy-Reference-Cited by-同舟云学术

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Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

Published:2016-03-09 Issue:4S Volume:55 Page:04EG05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shiojima Kenji,Murase Shingo,Yamamoto Shingo,Mishima Tomoyoshi,Nakamura Tohru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04EG05/pdf

Reference30 articles.

1. Planar GaAs IC technology: Applications for digital LSI

2. Si‐implanted InGaP/GaAs metal‐semiconductor field‐effect transistors

3. A self-aligned source/drain planar device for ultrahigh-speed GaAs MESFET VLSIs

4. GaAs LSI-directed MESFET's with self-aligned implantation for n+-layer technology (SAINT)

5. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

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1. Two‐Dimensional Characterization of Au/Ni/Thin Heavily‐Mg‐Doped p‐/n‐GaN Structure under Applied Voltage by Scanning Internal Photoemission Microscopy;physica status solidi (b);2024-03-19

2. Mapping of ultra-high-pressure annealed n-GaN Schottky contacts using scanning internal photoemission microscopy;Materials Science in Semiconductor Processing;2023-08

3. Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy;Japanese Journal of Applied Physics;2022-11-14

4. Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy;Japanese Journal of Applied Physics;2022-07-27

5. Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes;Japanese Journal of Applied Physics;2022-02-23

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