Long range order in AlxGa1−xN films grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119916
Reference16 articles.
1. GaN, AlN, and InN: A review
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
4. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
5. Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy
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3. Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy;Journal of Electronic Materials;2024-02-23
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