Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy

Published:2024-02-23 Issue:6 Volume:53 Page:2789-2797
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Sarney Wendy L.^ORCID,Ji Mihee^ORCID,Leff Asher C.^ORCID,Larkin LeighAnn S.,Garrett Gregory A.,Sampath Anand V.,Wraback Michael

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11664-024-10952-x.pdf

Reference21 articles.

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3. H. Wu, W. Zhao, C. He, K. Zhang, L. He, and Z. Chen, Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer. Superlattices Microstruct. 125, 343 (2019). https://doi.org/10.1016/j.spmi.2018.12.008.

4. R.J. Shul, R.D. Briggs, S.J. Pearton, C.B. Vartuli, C.R. Abernathy, J.W. Lee, C. Constantine, and C. Barratt, Chlorine-based plasma etching of GaN. MRS Online Proc. Libr. 449, 969 (1996). https://doi.org/10.1557/PROC-449-969.

5. Y. Ohba, H.Y. Hiroaki Yoshida, and R.S. Rie Sato, Growth of high-quality AlN, GaN and AlGaN with atomically smooth surfaces on sapphire substrates. Jpn. J. Appl. Phys. 36, L1565 (1997). https://doi.org/10.1143/JJAP.36.L1565.

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