Author:
Shul R. J.,Briggs R. D.,Pearton S. J.,Vartuli C. B.,Abernathy C. R.,Lee J. W.,Constantine C.,Barratt C.
Abstract
ABSTRACTThe wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 μm/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved etch quality of the group-III nitrides over more conventional reactive ion etch (RIE) systems.
Publisher
Springer Science and Business Media LLC
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