The dry etching of group III-nitride wide-bandgap semiconductors-Reference-Cited by-同舟云学术

The dry etching of group III-nitride wide-bandgap semiconductors

Published:1996-08 Issue:8 Volume:48 Page:50-55
ISSN:1047-4838
Container-title:JOM
language:en
Short-container-title:JOM

Author:

Gillis H. P.,Choutov D. A.,Martin K. P.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF03223028.pdf

Reference75 articles.

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3. S. Strite, “The III-V Nitride Semiconductors for Blue Light Emission,” Advances in Solid State Physics 34, ed. R. Helbig (Braunschweig/Wiesbaden, Germany: Vieweg, 1995), pp. 79–95.

4. J.R. Mileham et al., Appl. Phys. Lett, 67 (1995), p. 1119.

5. M.S. Minsky, A.M. While, and E.L. Hu, Appl. Phys. Lett, 68 (1996), p. 1531.

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