Morphological evolution of III–V semiconductors and SiO2 during low energy electron enhanced dry etching-Reference-Cited by-同舟云学术

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Morphological evolution of III–V semiconductors and SiO2 during low energy electron enhanced dry etching

Published:2004-07 Issue:4 Volume:22 Page:1600-1605
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Lee S. H.,Ho R. M.,Goorsky M. S.,Gillis H. P.,Margolese D. I.,Demine M. A.,Anz S. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1752896

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al Ga1–As(100) (x ∼ 0.3) surfaces treated with aqueous sodium sulfide solution: Chemistry and electronic structure;Materials Science in Semiconductor Processing;2024-10

2. Study of Wet Chemical Etching of Al[sub x]Ga[sub 1−x]InP[sub 2] Films Using Hydrochloric Acid;Journal of The Electrochemical Society;2006

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