Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer-Reference-Cited by-同舟云学术

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Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer

Published:2019-01 Issue: Volume:125 Page:343-347
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Wu Hualong^ORCID,Zhao Wei,He Chenguang,Zhang Kang,He Longfei,Chen Zhitao

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Program of Guangdong

Pearl River S&T Nova Program of Guangzhou

Science and Technology Program of Dongguan

GDAS’ Project of Science and Technology Development

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD

2. AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

3. Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition

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1. Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy;Journal of Electronic Materials;2024-02-23

2. Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition;Crystal Growth & Design;2024-02-06

3. Introduction of dislocation filtering with different ammonia flows in low-temperature grown AlN (< 1200 °C);Micro and Nanostructures;2023-11

4. Crystalline and optical properties of AlN films with varying thicknesses (0.4-10 µm) grown on sapphire by metalorganic chemical vapor deposition;Thin Solid Films;2023-09

5. Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport;Materials;2022-12-09

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