Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
Author:
Affiliation:
1. IMaSS Nagoya University, Nagoya 464-8601, Japan
2. Department of Electronics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
3. Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
Abstract
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0106321
Reference76 articles.
1. The 2018 GaN power electronics roadmap
2. Recent progress of GaN power devices for automotive applications
3. Progress on and challenges of p-type formation for GaN power devices
4. Recent development of vertical GaN power devices
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