Progress on and challenges of p-type formation for GaN power devices-Reference-Cited by-同舟云学术

Progress on and challenges of p-type formation for GaN power devices

Published:2020-09-07 Issue:9 Volume:128 Page:090901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Narita Tetsuo¹^ORCID,Yoshida Hikaru²,Tomita Kazuyoshi¹³,Kataoka Keita¹^ORCID,Sakurai Hideki³⁴^ORCID,Horita Masahiro³^ORCID,Bockowski Michal³⁵^ORCID,Ikarashi Nobuyuki³^ORCID,Suda Jun³,Kachi Tetsu³,Tokuda Yutaka²

Affiliation:

1. Toyota Central R&D Labs., Inc., Nagakute 480-1192, Japan

2. Aichi Institute of Technology (AIT), Toyota 470-0392, Japan

3. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8601, Japan

4. Institute of Advanced Technology, ULVAC, Inc., Chigasaki 253-8543, Japan

5. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

Funder

MEXT Research and development of next-generation semiconductor to realize energy-saving society

Narodowe Centrum Nauki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0022198

Reference74 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

3. Hole Compensation Mechanism of P-Type GaN Films

4. Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

5. Self-compensation in Mg doped p-type GaN grown by MOCVD

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