Generalized trapping kinetic model for the oxide degradation after Fowler–Nordheim uniform gate stress

Author:

Pananakakis G.,Ghibaudo G.,Papadas C.,Vincent E.,Kies R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. EEPROM endurance degradation at different temperatures: State of the art TCAD simulation;Microelectronics Reliability;2022-09

2. Advanced TCAD Simulation of Tunnel Oxide Degradation for EEPROM Applications;2022 IEEE 4th International Conference on Dielectrics (ICD);2022-07-03

3. Simulation of state of the art EEPROM programming window closure during endurance degradation;2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS);2021-06-28

4. Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology;Microelectronics Reliability;2017-12

5. Microscopic Analysis of Erase-Induced Degradation in 40 nm NOR Flash Technology;IEEE Transactions on Device and Materials Reliability;2016-12

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