Positive charge effects on the flatband voltage shift during avalanche injection on Al‐SiO2‐Si capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331009
Reference17 articles.
1. Avalanche injection currents and trapping phenomena in thermal SiO2
2. Electron trapping in SiO2 at 295 and 77 °K
3. The Effect of Hot Electron Injection on Interface Charge Density at the Silicon to Silicon Dioxide Interface
4. Slow and fast states induced by hot electrons at Si‐SiO2interface
5. Discharge of trapped electrons from MOS structures
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