Slow and fast states induced by hot electrons at Si‐SiO2interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331010
Reference23 articles.
1. Avalanche Injection Effects in MIS Structures and Realization of N-Channel Enhancement Type MOS FETS
2. Electron trapping in SiO2 at 295 and 77 °K
3. The Effect of Hot Electron Injection on Interface Charge Density at the Silicon to Silicon Dioxide Interface
4. The Effects of Processing on Hot Electron Trapping in SiO2
5. Location of positive charges in SiO2films on Si generated by vuv photons, x rays, and high‐field stressing
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