Author:
Matteo Franck,Coulié Karine,Simola Roberto,Postel-Pellerin Jérémy,Melul Franck,Regnier Arnaud
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. D. Frohman-Bentchkowsky J. Mar G. Perlegos W. S. Johnson "Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same”, United States Patent, 1978.
2. A 16Kb electrically erasable nonvolatile memory;Johnson,1980
3. Model for programming window degradation in FLOTOX EEPROM cells;Papadas;IEEE Electron Device Lett.,1992
4. Charges trapped throughout the oxide and their impact on the Fowler-Nordheim current in MOS devices;Ku;IEEE Trans.Electron Devices,1994
5. Generalized trapping kinetic model for the oxide degradation after Fowler-Nordheim uniform gate stress;Pananakakis;J. Appl. Phys.,1997