Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers
Author:
Affiliation:
1. Univ. Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM, F-38054 Grenoble, France
2. Univ. Grenoble Alpes, CEA/LETI, MINATEC Campus, F-38054 Grenoble, France
3. Univ. Grenoble Alpes, CNRS, Grenoble INP, IMEP-LaHC, F-38000 Grenoble, France
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5121474
Reference35 articles.
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5. Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
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