Growth and structural properties of step-graded, high Sn content GeSn layers on Ge-Reference-Cited by-同舟云学术

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Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

Published:2017-08-24 Issue:9 Volume:32 Page:094006
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Aubin J,Hartmann J M,Gassenq A,Rouviere J L,Robin E,Delaye V,Cooper D,Mollard N,Reboud V,Calvo V

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/aa8084/pdf

Reference40 articles.

1. Ge-on-Si laser operating at room temperature

2. High-performance Ge-on-Si photodetectors

3. Ultracompact optical buffers on a silicon chip

4. (Invited) Toward GeSn Lasers: Light Amplification and Stimulated Emission in GeSn Waveguides at Room Temperature

5. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

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1. Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications;Journal of Vacuum Science & Technology B;2024-07-01

3. Mid‐Infrared Top‐Gated Ge_0.82Sn_0.18 Nanowire Phototransistors;Advanced Optical Materials;2024-05-11

4. Enhancing the Detectivity of Direct Bandgap Ge_0.86Sn_0.14 Photodiodes by Layer Transfer;2024 IEEE Silicon Photonics Conference (SiPhotonics);2024-04-15

5. Mid-infrared Imaging Using Strain-Relaxed Ge_1–xSn_x Alloys Grown on 20 nm Ge Nanowires;Nano Letters;2024-04-12

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