H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces-Reference-Cited by-同舟云学术

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H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

Published:2022-04 Issue: Volume:582 Page:152309
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Benrabah Sabria,Legallais Maxime,Besson Pascal,Ruel Simon,Vauche Laura,Pelissier Bernard,Thieuleux Chloé,Salem Bassem,Charles Matthew

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference42 articles.

1. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems;Su;Semicond. Sci. Technol.,2013

2. (Invited) epitaxy of GaN on Si (111) for power electronics, RF and LEDs;Charles;ECS Trans.,2018

3. Substrates for gallium nitride epitaxy;Liu;Mater. Sci. Eng.: R: Reports,2002

4. Formation of hexagonal pyramids and pits on V-/VI-polar and III-/II-polar GaN/ZnO surfaces by wet etching;Han;J. Electrochem. Soc.,2010

5. Review of commercial GaN power devices and GaN-Based Converter Design Challenges;Jones;IEEE J. Emerg. Sel. Topics Power Electron.,2016

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1. Spectroscopic investigation of oxidation in GaSe 2D layered materials;Microelectronic Engineering;2024-11

2. Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage;Applied Physics Express;2024-09-01

3. Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction;Journal of Applied Physics;2024-05-01

4. Energization‐Time Dependence of Electrical Properties of Anodized n‐GaN Grown on Si Substrates;physica status solidi (b);2024-03-19

5. Spectroscopic Investigation of Oxidation in Gase 2d Layered Materials;2024

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