The influence of dislocation density on electron mobility in InP films on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106353
Reference9 articles.
1. Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
2. Dislocation density reduction through annihilation in lattice‐mismatched semiconductors grown by molecular‐beam epitaxy
3. Film thickness dependence of dislocation density reduction in GaAs‐on‐Si substrates
4. Heteroepitaxy of InP on Si: Reduction of defects by substrate misorientation and thermal annealing
5. Optimization of InP / Si heteroepitaxial growth conditions using organometallic vapor phase epitaxy
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective Area Growth of InP and Defect Elimination on Si (001) Substrates;Journal of The Electrochemical Society;2011
2. Growth of high quality InP layers in STI trenches on miscut Si (001) substrates;Journal of Crystal Growth;2011-01
3. Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) Substrates;ECS Transactions;2010-11-23
4. Selective area growth of high quality InP on Si (001) substrates;Applied Physics Letters;2010-09-20
5. Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates;Journal of The Electrochemical Society;2010
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