Selective Area Growth of InP and Defect Elimination on Si (001) Substrates-Reference-Cited by-同舟云学术

Selective Area Growth of InP and Defect Elimination on Si (001) Substrates

Published:2011 Issue:6 Volume:158 Page:H645
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Wang Gang,Leys Maarten,Loo Roger,Richard Olivier,Bender Hugo,Brammertz Guy,Waldron Niamh,Wang Wei-E,Dekoster Johan,Caymax Matty,Seefeldt Marc,Heyns Marc

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications

2. D. Streit, R. Lai, A. Oki, and A. Gutierrez-Aitken , in14th Indium Phosphide and Related Materials Conference IEEE, p. 11 (2002).

3. Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping

4. Selective area growth of high quality InP on Si (001) substrates

5. High quality Ge on Si by epitaxial necking

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