Selective area growth of high quality InP on Si (001) substrates-Reference-Cited by-同舟云学术

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Selective area growth of high quality InP on Si (001) substrates

Published:2010-09-20 Issue:12 Volume:97 Page:121913
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang G.,Leys M. R.,Loo R.,Richard O.,Bender H.,Waldron N.,Brammertz G.,Dekoster J.,Wang W.,Seefeldt M.,Caymax M.,Heyns M. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3491554

Reference17 articles.

1. IEEE 20th International Conference on Indium Phosphide and Related Materials (IPRM);Decobert J.,2008

2. MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

3. Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping

4. Selective Epitaxial Growth of InP in STI Trenches on Off-Axis Si (001) Substrates

5. High quality Ge on Si by epitaxial necking

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2. The Si (001) substrate with sub-nano streaky surface: Preparation and its application to high-quality growth of GaAs heteroepitaxial-layer;Applied Surface Science;2024-01

3. A thermally erasable silicon oxide layer for molecular beam epitaxy;Journal of Physics D: Applied Physics;2022-08-19

4. Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review;Crystals;2022-07-21

5. Characterization of interface properties of Al₂O₃/n-GaSb and Al₂O₃/InAs/n-GaSb metal-oxide-semiconductor structures;Japanese Journal of Applied Physics;2022-05-25

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