Optimization of InP / Si heteroepitaxial growth conditions using organometallic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition
2. MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer
3. M. Razeghi, Materials Research Society 1988 Spring Meeting, Symp. on Heteroepitaxy on Silicon, Reno, NV. April 1988, Papers No. A4.3 and No. P4.3.
4. Growth of antiphase-domain-free GaP on Si by organometallic vapor phase epitaxy
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