Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

Published:1989-02-13 Issue:7 Volume:54 Page:623-625
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Köhrbrück R.,Munnix S.,Bimberg D.,Larkins E. C.,Harris J. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.100898

Reference22 articles.

1. Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

2. Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption

3. Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo study

4. Implications of the configuration‐dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III‐V molecular beam epitaxial growth and the dynamics of the reflection high‐energy electron diffraction intensity

5. Theoretical studies of the intrinsic quality of GaAs/AlGaAs interfaces grown by MBE: Role of kinetic processes

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