Implications of the configuration‐dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III‐V molecular beam epitaxial growth and the dynamics of the reflection high‐energy electron diffraction intensity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96234
Reference13 articles.
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3. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique
4. Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulations
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