Thin Film Growth Processes
Author:
Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-0-387-68650-9_10.pdf
Reference21 articles.
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2. Madhukar, A. and Ghaisas, S.V. “Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensity.” Appl. Phys. Lett. 1985; 47: 247-9.
3. Hasan, M.-A.; Barnett, S.A.; Sundgren, J.-E.; Greene, J.E. “Nucleation and initial growth of In deposited on Si3N4 using low-energy (≤300 eV) accelerated beams in ultrahigh vacuum.” J. Vac. Sci. Technol. A 1987; 5: 1883-7.
4. Jun Wang; Drabold, D.A.; and Rockett, A. “Binding and diffusion of a Si adatom around type B steps on Si (001) c(4*2).” Surf. Sci. 1995; 344: 251-7.
5. Ehrlich, G. and Hudda, F.G., “Atomic view of surface self-diffusion - tungsten on tungsten” J. Chem. Phys. 1966; 44: 1039-40.
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