Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3514549
Reference25 articles.
1. Artificial control of optical gain polarization by stacking quantum dot layers
2. Growth, Structural, and Optical Properties of Self-Assembled (In,Ga)As Quantum Posts on GaAs
3. Formation of columnar (In,Ga)As quantum dots on GaAs(100)
4. Growth and characterization of InAs columnar quantum dots on GaAs substrate
5. Shape-engineered epitaxial InGaAs quantum rods for laser applications
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1. InP and InGaAs grown on InP substrate by molecular beam epitaxy;MATEC Web of Conferences;2022
2. Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source;Journal of Crystal Growth;2013-09
3. The effect of impurity on transition frequency of bound polaron in quantum rods;Pramana;2012-08-24
4. Electronic structure and optical anisotropy of InGaAs quantum rods studied by photoreflectance and photoluminescence;physica status solidi (c);2012-05-21
5. Electronic states and intraband terahertz optical transitions in InGaAs quantum rods;Journal of Applied Physics;2012-04
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