Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes-Reference-Cited by-同舟云学术

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Published:2019-11-11 Issue:20 Volume:115 Page:201602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alugubelli Shanthan R.¹^ORCID,Fu Houqiang²^ORCID,Fu Kai²^ORCID,Liu Hanxiao¹^ORCID,Zhao Yuji²,McCartney Martha R.¹,Ponce Fernando A.¹^ORCID

Affiliation:

1. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

Funder

Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5127014

Reference26 articles.

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5. Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

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