Surface processes in CF4/O2reactive etching of silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99195
Reference10 articles.
1. Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas
2. Spectroscopic diagnostics of CF4‐O2 plasmas during Si and SiO2 etching processes
3. Anisotropic etching of SiO2in low‐frequency CF4/O2and NF3/Ar plasmas
4. X‐ray photoelectron spectroscopy study of the surface chemistry of freon‐oxygen plasma etched silicon
5. Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density
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