Selective anisotropic etching of GaN over AlGaN for very thin films-Reference-Cited by-同舟云学术

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Selective anisotropic etching of GaN over AlGaN for very thin films

Published:2018-05 Issue:3 Volume:36 Page:030603
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Wong Joel C.¹,Micovic Miroslav¹,Brown David F.¹,Khalaf Isaac¹,Williams Adam¹,Corrion Andrea¹

Affiliation:

1. HRL Laboratories, 3011 Malibu Canyon Road, Malibu, California 90265

Funder

Defense Advanced Research Projects Agency

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.5012530

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique;Microsystems & Nanoengineering;2021-04-23

2. Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application;Micromachines;2021-04-14

3. Smooth, low rate, selective GaN/AlGaN etch;AIP Advances;2021-02-01

4. Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma;Materials Research Letters;2020-11-24

5. Plasma etching of wide bandgap and ultrawide bandgap semiconductors;Journal of Vacuum Science & Technology A;2020-03

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