SiGe-free strained Si on insulator by wafer bonding and layer transfer-Reference-Cited by-同舟云学术

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SiGe-free strained Si on insulator by wafer bonding and layer transfer

Published:2003-06-16 Issue:24 Volume:82 Page:4256-4258
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Langdo T. A.,Currie M. T.,Lochtefeld A.,Hammond R.,Carlin J. A.,Erdtmann M.,Braithwaite G.,Yang V. K.,Vineis C. J.,Badawi H.,Bulsara M. T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1581371

Reference16 articles.

1. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

2. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

3. Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

4. Electron and hole mobility enhancement in strained SOI by wafer bonding

5. SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen

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3. Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase;Semiconductors;2022-03

4. Variability analysis of a graded-channel dual-material double-gate strained-silicon MOSFET with fixed charges;Journal of Computational Electronics;2022-01-15

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