Effect of fluorine on the diffusion of through‐oxide implanted boron in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105506
Reference6 articles.
1. Reduction of transient‐enhanced diffusion of boron in silicon by implantation through oxide
2. Effect of Recoil Implantation of Oxygen on Boron Enhanced Diffusion in Silicon
3. Role of recoil implanted oxygen in determining boron diffusion in silicon
4. Advantages of Fluorine Introduction in Boron Implanted Shallow p+/n-Junction Formation
5. Fast shrinkage of oxidation stacking faults during O2/NF3oxidation of silicon
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1. Reduced boron diffusion under interstitial injection in fluorine implanted silicon;Journal of Applied Physics;2007-12
2. 110-GHz f/sub T/ silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression;IEEE Transactions on Electron Devices;2006-03
3. Electrical Characteristics of Ultrashallow p[sup +]∕n Junction Formed by BF[sub 3] Plasma Doping and Two-Step Annealing Process;Electrochemical and Solid-State Letters;2006
4. Ultrashallow p[sup +]∕n Junction Prepared by Low Energy BF[sub 3] Plasma Doping and KrF Excimer Laser Annealing;Electrochemical and Solid-State Letters;2006
5. Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si<tex>$_1-x$</tex>Ge<tex>$_x$</tex>;IEEE Transactions on Electron Devices;2005-04
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