Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si<tex>$_1-x$</tex>Ge<tex>$

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Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si<tex>$_1-x$</tex>Ge<tex>$_x$</tex>

Published:2005-04 Issue:4 Volume:52 Page:518-526
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

ElMubarek H.A.W.,Karunaratne M.,Bonar J.M.,Dilliway G.D.,Wang Y.,Hemment P.L.F.,Willoughby A.F.,Ashburn P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/30538/01408153.pdf?arnumber=1408153

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of phosphorus diffusion in germanium by fluorine implantation;Journal of Applied Physics;2013-12-14

2. Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs;IEICE Transactions on Electronics;2013

3. Fluorine implantation in germanium for dopant diffusion control;AIP Conference Proceedings;2012

4. Reduced boron diffusion under interstitial injection in fluorine implanted silicon;Journal of Applied Physics;2007-12

5. Fluorine-vacancy complexes in Si-SiGe-Si structures;Journal of Applied Physics;2007-07

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