Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs
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Published:2013
Issue:5
Volume:E96.C
Page:624-629
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ISSN:0916-8524
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Container-title:IEICE Transactions on Electronics
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language:en
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Short-container-title:IEICE Trans. Electron.
Author:
JANG Jae-Hyung1, KWON Hyuk-Min1, KWAK Ho-Young1, KWON Sung-Kyu1, HWANG Seon-Man1, SHIN Jong-Kwan1, SUNG Seung-Yong1, CHUNG Yi-Sun2, LEE Da-Soon2, LEE Hi-Deok1
Affiliation:
1. Dept. of Electronics Engineering, Chungnam National Univ. 2. Magnachip Semiconductor Inc.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
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