Fluorine-vacancy complexes in Si-SiGe-Si structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2753573
Reference20 articles.
1. Fluorine in Si: Native-defect complexes and the suppression of impurity diffusion
2. Effect of fluorine on boron thermal diffusion in the presence of point defects
3. Fluorine-enhanced boron diffusion induced by fluorine postimplantation in silicon
4. Interaction between implanted fluorine atoms and point defects in preamorphized silicon
5. Observation of fluorine-vacancy complexes in silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of the far-infrared optical property for glasses by plasma-assisted dispersion of fluorocarbon species into the shallow surface;Review of Scientific Instruments;2021-06-01
2. Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium;Semiconductor Science and Technology;2014-01-30
3. Positron annihilation studies of fluorine-vacancy complexes in Si and SiGe;Journal of Applied Physics;2012-04
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