Interaction between implanted fluorine atoms and point defects in preamorphized silicon

Author:

Impellizzeri G.,dos Santos J.H.R.,Mirabella S.,Napolitani E.,Carnera A.,Priolo F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Yield enhancement using source/drain BF2+ implant process optimization;2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2010-07

2. Fluorine-vacancy complexes in Si-SiGe-Si structures;Journal of Applied Physics;2007-07

3. Point defect engineering in preamorphized silicon enriched with fluorine;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12

4. Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion;Journal of Applied Physics;2006-05-15

5. Fluorine incorporation in preamorphized silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

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