Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1479458
Reference8 articles.
1. Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials
2. The effect of boron implant energy on transient enhanced diffusion in silicon
3. Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction
4. Retardation of boron diffusion in silicon by defect engineering
5. Rapid Thermal Process Requirements for The Annealing of Ultra-Shallow Junctions
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