Role of recoil implanted oxygen in determining boron diffusion in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345175
Reference15 articles.
1. Enhanced tail diffusion of ion implanted boron in silicon
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3. Implantation damage and the anomalous transient diffusion of ion‐implanted boron
4. Retarded and enhanced dopant diffusion in silicon related to implantation‐induced excess vacancies and interstitials
5. Transient boron diffusion in ion‐implanted crystalline and amorphous silicon
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3. Anomalous diffusion of lightly implanted As into Si substrate during N2annealing;Applied Physics Letters;1994-06-06
4. COMPARISON OF 11B+ AND 49BF2+ AT LOW IMPLANTATION ENERGY IN GERMANIUM PREAMORPHIZED SILICON;Ion Implantation Technology–92;1993
5. Effect of Fluorine on the Dopant Diffusion of Through-Oxtoe Implanted Boron in Si - a Correlation with Microstructural Defects;MRS Proceedings;1992
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