110-GHz f/sub T/ silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression-Reference-Cited by-同舟云学术

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110-GHz f/sub T/ silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression

Published:2006-03 Issue:3 Volume:53 Page:545-552
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kham M.N.,Mubarek H.A.W.E.,Bonar J.M.,Ashburn P.,Ward P.,Fiore L.,Petralia R.,Alemanni C.,Messina A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/33601/01597533.pdf?arnumber=1597533

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduced boron diffusion under interstitial injection in fluorine implanted silicon;Journal of Applied Physics;2007-12

2. Effect of fluorine on boron diffusion under interstitial injection from the surface;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12

3. Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates;Nanoscaled Semiconductor-on-Insulator Structures and Devices

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